Silicon Photonics STED Plasma Dispersion Effect Super-Resolved Imaging in Silicon

BIRAD - Research and Development Co. Ltd

The Problem The silicon industry is currently heading toward 10 nm technology in integrated circuits. Promoting this market trend is largely dependent on the development of super-resolution in silicon microscopy. The Solution We propose a novel method that provides the ability to probe the silicon under surface in super-resolution. More specifically, we developed a new…

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Novel Transistor Gain Cell With Feedback

BIRAD - Research and Development Co. Ltd

The Problem Embedded memories, typically implemented with a 6T SRAM bitcell consume an ever growing share of the total silicon area and power. Gain cell embedded DRAM (GC-eDRAM) is an alternative to 6T SRAM, offering higher density, lower leakage, and 2-port operation. However, gain cells: Rely on dynamic storage Results in very low data retention…

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Novel High-Density Memory Macro

BIRAD - Research and Development Co. Ltd

The Problem Due to the growing demand for high-density embedded memories in modern microprocessors and other VLSI Systemon- Chip (SoC) designs, gain cell embedded DRAM (GCeDRAM) has emerged as an alternative to static random access memory (SRAM). GCeDRAM is known for its high-density, non-destructive read operation, low leakage power, and two-port operation. However, GCeDRAM requires…

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Gain Cell Embedded Dram In Fully Depleted Silicon-On-Insulator Technology

BIRAD - Research and Development Co. Ltd

The Problem As technology dimensions continue to scale down, high-density embedded memories are of great interest for many VLSI systems. However, 6T SRAM cells incur a large area penalty and suffer from high static power consumption in scaled CMOS nodes, often dominating the total area and power budget of a system. Gain-Cell embedded DRAM (GC-eDRAM)…

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Cutting-Edge Complementary Dual Modular Redundancy Memory Cell

BIRAD - Research and Development Co. Ltd

The Problem Embedded memories are often operated at scaled supply voltages in order to reduce their power consumption. However, reduction in the supply voltage also increases their susceptibility to soft errors. Soft errors occur when an energetic particle hits a reversed bias junction of an internal node in a memory cell, possibly flipping the data…

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Ultra-Low Power, Nw Level Bandgap Voltage Reference (Bgref)

BIRAD - Research and Development Co. Ltd

With advances in the Internet of Things (IoT) applications and the expansion of mobile devices, energy consumption has become a primary focus of attention in integrated circuit design. These mobile battery-operated devices need to operate for extended periods without recharging and therefore requiring ultra-low energy consumption. Many IoT devices require operation in a wide range…

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Cutting-edge, Physical Unclonable Functions Related to Inverter Trip Points

BIRAD - Research and Development Co. Ltd

The Problem The huge amount of sensing devices found in future cars, homes, workplaces, and cities require a much stricter security requirement for identification and authentication. It is essential that during hardware communication, the two parties are capable of identifying each other through secret keys and reliable authentication protocols. A technique which has recently emerged…

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Highly Reliable SRAM PUF

BIRAD - Research and Development Co. Ltd

The Problem The huge amount of sensing devices found in future cars, homes, workplaces, and cities require a much stricter security requirement for identification and authentication. However, when the variation is small, the logical value will be determined by noise and can vary from run to run and the bit is unstable. The unstable bits…

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Innovative Ultra-Miniature Ring Oscillator Temperature Sensor

BIRAD - Research and Development Co. Ltd

The Problem An important power management functions in commercial IC’s is temperature sensing. Since commercial processors can have as many as 40 sensors, the industry is constantly pursuing a small, low-power sensor. The Solution We present a promising, novel ultra-miniature ring-oscillator sensor which at 750 um2 is the world’s smallest integrated smart sensor and has the…

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Novel Coherent Fluorescence Super-Resolution Microscopy

BIRAD - Research and Development Co. Ltd

The Problem The localization precision which is limited by the square root of N is obtained due to non-coherent addition of the collected photons. An increase in the precision is required as it leads to significant increase in the imaging resolution for the same amount of illumination of alternatively it allows the same resolution as…

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