Alexander Fish
Embedded memories, typically implemented with a 6T SRAM bitcell consume an ever growing share of the total silicon area and power. Gain cell embedded DRAM (GC-eDRAM) is an alternative to 6T SRAM, offering higher density, lower leakage, and 2-port operation. However, gain cells: Rely on dynamic storage Results in very low data retention times Increases…
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The Problem Due to the growing demand for high-density embedded memories in modern microprocessors and other VLSI Systemon- Chip (SoC) designs, gain cell embedded DRAM (GCeDRAM) has emerged as an alternative to static random access memory (SRAM). GCeDRAM is known for its high-density, non-destructive read operation, low leakage power, and two-port operation. However, GCeDRAM requires…
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The Problem As technology dimensions continue to scale down, high-density embedded memories are of great interest for many VLSI systems. However, 6T SRAM cells incur a large area penalty and suffer from high static power consumption in scaled CMOS nodes, often dominating the total area and power budget of a system. Gain-Cell embedded DRAM (GC-eDRAM)…
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