Embedded DRAM
Cutting-Edge Complementary Dual Modular Redundancy Memory Cell
By Nati Fisher
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December 18, 2020
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Comments Off on Cutting-Edge Complementary Dual Modular Redundancy Memory Cell
Embedded memories are often operated at scaled supply voltages in order to reduce their power consumption. However, reduction in the supply voltage also increases their susceptibility to soft errors. Soft errors occur when an energetic particle hits a reversed bias junction of an internal node in a memory cell, possibly flipping the data stored in…
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