GC-eDRAM

BIRAD - Research and Development Co. Ltd

Novel Transistor Gain Cell With Feedback

By Nati Fisher / December 18, 2020 / Comments Off on Novel Transistor Gain Cell With Feedback

Embedded memories, typically implemented with a 6T SRAM bitcell consume an ever growing share of the total silicon area and power. Gain cell embedded DRAM (GC-eDRAM) is an alternative to 6T SRAM, offering higher density, lower leakage, and 2-port operation. However, gain cells: Rely on dynamic storage Results in very low data retention times Increases…

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BIRAD - Research and Development Co. Ltd

Gain Cell Embedded Dram In Fully Depleted Silicon-On-Insulator Technology

By Nati Fisher / December 18, 2020 / Comments Off on Gain Cell Embedded Dram In Fully Depleted Silicon-On-Insulator Technology

The Problem As technology dimensions continue to scale down, high-density embedded memories are of great interest for many VLSI systems. However, 6T SRAM cells incur a large area penalty and suffer from high static power consumption in scaled CMOS nodes, often dominating the total area and power budget of a system. Gain-Cell embedded DRAM (GC-eDRAM)…

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